Complementary Silicon High Power Transistor NPN 2N3055A

2N3055A Transistor Switch Circuit

 2N3055A Characteristics / Parameters

 Transistor NPN High Power Bipolar Device in an Hermetically sealed TO3 Metal Package.

Component CharacteristicsComponent Parameters
Type Designator                         2N3055A
Transistor OutlinePackage TypeCASE 1-07:  TO-204AA
MountingThrough Hole
FamilyBipolar Power
Material of TransistorSilicon
PolarityNPN
Maximum Power Dissipation115W 
Maximum Collector to Base Voltage100V
Base Current7A DC
Maximum Collector to Emitter Voltage60V
Maximum Emitter Base Voltage7V
Maximum Collector Current15A
Minimum hFE10
Maximum hFE70
FunctionAmplification / Switch
Transition Frequency0.8 MHz
Manufacturers

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  1. Savantic Inc.
  2. ON Semiconductor
  3. Motorola
  4. Boca Semiconductor Corporation
  5. MOSPEC Semiconductor
  6. Freescale Semiconductor
  7. INCHANGE Semiconductor
  8. SEME LAB
  9. New Jercy Semiconductor Products, Inc.

 Three modes of Operating Region of Transistors are:

  1. Active Region
  2. Saturation Region
  3. Cut-off Region

1- Active Region Characteristics:

  • In 'Active Region' , the transistor operate as an 'Amplifier'
  • The Junction Base-Emitter is forward Biased.
  • The Junction Collector-Base is Reverse Biased.

2- Saturation Region Characteristics:

  • ​​In 'Saturation' region, the transistor operates as an 'Closed Switch'.
  • The 'Base' Electrode is Connected to Supply Voltage [ Vcc ]
  • The Junction Base-Emitter Voltage is greater than 0.6V i.e VBE > 0.6V.
  • The Junction Base-Emitter is Forward Biased.
  • The Junction Collector-Base is Forward Biased.
  • Maximum Saturation Collector Current [ Ic ] flows, i.e [ Ic=Vcc/RL ]
  • This condition of transistor is act as a 'Fully-ON' and this is 'Saturation Region'.
  • Collector to Emitter Voltage [ VCE ] is approximately equal to Zero ideally. i.e [ VCE = 0V ]

​3- Cut-Off Region Characteristics:

  • In 'Cut-off' region, the transistor operate as an 'Open Switch'.​
  • The 'Base' Electrode is Grounded to zero Voltage [ 0V ].
  • The Junction Base-Emitter Voltage is less than 0.6V i.e VBE < 0.6V.
  • The Junction Base-Emitter is Reverse Biased.
  • The Junction Collector-Base is Reverse Biased.
  • No Collector Current [ Ic ] flows, i.e [ Ic=0 ].
  • This condition of transistor is act as a 'Fully-OFF ' and this is 'Cut-Off Region'.
  • Collector to Emitter Voltage [ VCE ] is approximately equal to Supply Voltage [ VCC ] [ VCE = VCC ]

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